Figure 1From: Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranesSchematic, optical microscope image, and TEM cross-section images. (a) Schematic of SiNM-based FeFET devices, (b) Optical microscope image of the electrical measurements by probe method, and (c, d) TEM cross-section images of SiNMs.Back to article page