Figure 4From: Passivation ability of graphene oxide demonstrated by two-different-metal solar cellsThe AFM images of (a) SiG b 1, (b) SiG b 2, and (c) G b Si samples. For the sample of SiGb1, the deposited GO film was approximately 20 nm in thickness. On the other hand, the GO film on GbSi is much thicker due to the extra SC1 treatment before GO deposition.Back to article page