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Table 2 Thicknesses estimated by fitting of the spectroscopic ellipsometry measurements of surface-etched Si-QDSLs

From: Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

Parameters 300°C 400°C 500°C 600°C
MSE 14.94 10.80 14.72 15.90
Ts (nm) 1.9 1.4 2.8 2.1
T (nm) 165.0 172.8 171.2 245.5