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Table 1 Samples' key structure parameters together with the RT PL peak wavelength

From: Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes

Sample No. QWs QW thickness (nm) x and y(%) Structure RT PL peak λ(nm)
AsN2604 10 3.8 to 11 4 and 1.5 p-i-n 1,033
AsN3134 10 10 4.8 and 1.6 p-i-n 1,067
AsN3138 20 10 4.8 and 1.6 p-i-n 1,077
VN1585 10 10 3 and 1 n-i-p 998