Figure 4

FESEM images of CdS films grown on Ni-covered Si(100) substrate under different laser pulse energy. (a) 50 mJ, (b) 60 mJ, (c) 70 mJ, and (d) 80 mJ. The samples were prepared at the temperature of 475°C, and the deposition time, laser pulse energy, and frequency of catalyst-Ni were 10 min, 50 mJ, and 5 Hz, respectively.