TY - JOUR AU - Boscke, T. S. AU - Muller, J. AU - Brauhaus, D. AU - Schroder, U. AU - Bottger, U. PY - 2011 DA - 2011// TI - Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors JO - Appl Phys Lett. VL - 99 UR - https://doi.org/10.1063/1.3634052 DO - 10.1063/1.3634052 ID - Boscke2011 ER - TY - JOUR AU - Muller, J. AU - Schroder, U. AU - Boscke, T. S. AU - Muller, I. AU - Bottger, U. AU - Wilde, L. PY - 2011 DA - 2011// TI - Ferroelectricity in yttrium-doped hafnium oxide JO - J Appl Phys. VL - 110 UR - https://doi.org/10.1063/1.3667205 DO - 10.1063/1.3667205 ID - Muller2011 ER - TY - JOUR AU - Fang, R. C. AU - Sun, Q. Q. AU - Zhou, P. AU - Yang, W. AU - Wang, P. F. AU - Zhang, D. W. PY - 2013 DA - 2013// TI - High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition JO - Nanoscale Res Lett. VL - 8 UR - https://doi.org/10.1186/1556-276X-8-92 DO - 10.1186/1556-276X-8-92 ID - Fang2013 ER - TY - STD TI - Muller J, Boscke TS, Brauhaus D, Schroder U, Bottger U, Sundqvist J, et al. Ferroelectric Zr0.5Hf0.5O2 thin films for non-volatile memory applications. Appl Phys Lett. 2011;99:112901. ID - ref4 ER - TY - STD TI - Mueller S, Mueller J, Singh A, Riedel S, Sundqvist J, Schroeder U, et al. Incipient ferroelectricity in Al-doped HfO2 thin films. Adv Funct Mater. 2012;22:2412–7. ID - ref5 ER - TY - STD TI - Yu-Zhu G, Hong-Liang L, Geng Y, Ye Z-Y, Zhang Y, Sun Q-Q, et al. Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition. Nanoscale Research Letters. 2013;8:107. ID - ref6 ER - TY - STD TI - Ding S-J, Chen H-B, Cui X-M, Chen S, Sun Q-Q, Zhou P, et al. Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications. Nan Res Lett. 2013;8:80. ID - ref7 ER - TY - JOUR AU - Wang, J. AU - Zhang, T. Y. PY - 2006 DA - 2006// TI - Size effects in epitaxial ferroelectric islands and thin films JO - Phys Rev B. VL - 73 UR - https://doi.org/10.1103/PhysRevB.73.144107 DO - 10.1103/PhysRevB.73.144107 ID - Wang2006 ER - TY - STD TI - Kim KT, Kim CI, Kim JG. Effect of LaNiO3 electrode on microstructural and ferroelectric properties of Bi3.25Eu0.75Ti3O12 thin films. Thin Solid Films. 2007;515:8082–6. ID - ref9 ER - TY - JOUR AU - Seokhwan, B. AU - Seungjun, L. AU - Sunyeol, J. AU - Semyung, K. AU - Wooho, J. AU - Seokhoon, K. PY - 2008 DA - 2008// TI - Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition JO - J Electrochem Soc VL - 155 UR - https://doi.org/10.1149/1.2945908 DO - 10.1149/1.2945908 ID - Seokhwan2008 ER - TY - JOUR AU - Tagantsev, A. K. AU - Stolichnov, I. AU - Colla, E. L. PY - 2001 DA - 2001// TI - Polarization fatigue in ferroelectric films: basic experimental findings, phenomenological scenarios, and microscopic features JO - J Appl Phys VL - 90 UR - https://doi.org/10.1063/1.1381542 DO - 10.1063/1.1381542 ID - Tagantsev2001 ER - TY - STD TI - Muller J, Boscke TS, Schroder U, Mikolajick T, Frey L. Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2. IEEE Electron Device Lett. 2012;33(2):185–7. ID - ref12 ER -