Figure 9From: High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature Measured carrier concentration of the ZnO layer after hydrothermal growth. Carrier concentration of the ZnO layer at temperatures of (a) 70°C, (b) 80°C, and (c) 90°C. Data of the CVD ZnO seed was also included for comparison.Back to article page