Figure 3From: Seed/catalyst-free growth of zinc oxide on graphene by thermal evaporation: effects of substrate inclination angles and graphene thicknesses Atomic percentage of (a) Zn and (b) O of grown ZnO on SL and ML graphene at substrate’s inclination angle of 45° and 90°. Asterisk indicates that the data are extracted from the work presented in ref. [3].Back to article page