Figure 6From: Seed/catalyst-free growth of zinc oxide on graphene by thermal evaporation: effects of substrate inclination angles and graphene thicknesses Possible growth mechanism of ZnO structures. (a) SL 600°C, (b) ML 600°C, (c) SL 800°C, (d) ML 800°C, (e) SL 1,000°C, and (f) ML 1,000°C.Back to article page