Figure 1From: Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy Representative SEM images of the obtained NWs. (a) Ion beam-sputtered (100) substrate, (b) magnetron-sputtered (100) substrate, and (c) magnetron-sputtered (111)B substrate. The inset in each panel is the magnified picture of NWs to illustrate the cross-sectional morphologies. (d) A schematic model for the triangular and hexagonal prism NWs on different substrates. The blue and yellow parts represent GaAs and SiO2, respectively. (e) TEM characterization of NWs in (a); insets are HRTEM image and its corresponding FFTs.Back to article page