Figure 2From: Highly-ordered silicon inverted nanocone arrays with broadband light antireflectance SEM images and schematic drawing. (a) SEM image of PS spheres on planar Si after etching with initial diameters of 500 nm. SEM images of ordered Si inverted nanocone arrays with spacing 500 nm, depth 800 nm (b) top-view, (c) cross-sectional view. (d) Schematic drawing of Si inverted nanocone arrays (depth h, diameter d).Back to article page