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Figure 4 | Nanoscale Research Letters

Figure 4

From: Investigation of monolithic passively mode-locked quantum dot lasers with extremely low repetition frequency

Figure 4

QD material gain as a function of the injection current density for the considered device. The material gains for the GS (blue line) and the ES (red line) are shown. The inserted first two markers indicate the threshold gain positions of the lasers without passive section (circle marker) and with a 4-mm-long passive section (cross marker). The last square marker corresponds to a threshold gain position which will be discussed later.

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