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Figure 1 | Nanoscale Research Letters

Figure 1

From: Impact of program/erase operation on the performances of oxide-based resistive switching memory

Figure 1

Typical I-V curves and statistical distributions of Ti/HfO 2 /Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of R on and R off in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of R on and R off in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.

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