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Table 1 The distributions of R on and R off under different operation modes

From: Impact of program/erase operation on the performances of oxide-based resistive switching memory

Operation VS_SET and VS_RESET CS_SET and CS_RESET VS_SET and CS_RESET CS_SET and VS_RESET SP_P and SP_E AP_P and AP_E
Parameters R on R off R on R off R on R off R on R off R on R off R on R off
σ (kΩ) 0.716 3.7178 1.006 8.930 3.933 4.368 0.157 3.549 0.181 4.376 0.117 1.552
μ (kΩ) 1.218 25.338 1.927 29.154 3.513 24.494 0.673 32.051 0.575 10.708 0.453 12.687
σ/μ 0.588 0.147 0.522 0.306 1.119 0.178 0.234 0.111 0.315 0.409 0.268 0.122
β 5 9 3 3.4 2.1 6.7 6.5 10.5 3.5 5 5 10
R 63%(kΩ) 1.274 26.425 1.945 32.233 2.582 26.049 0.700 33.010 0.637 10.427 0.491 13.976
  1. The comparison of four DC operation methods and two pulse operation methods on their controllability to the variation in Ti/HfO2/Pt RRAM device are listed in the above.
  2. σ is the standard deviation, μ is the mean value, σ/μ is the coefficient of variation, and β and R 63% are the shape factor (or Weibull slop) and scale factor of the Weibull distributions of resistances, respectively.