Table 1 The fabrication process parameters in this work
Thin films (groups) | Deposition temperature (°C) | Precursor | Duration time (precursor A + purge + precursor B + purge) |
|---|---|---|---|
HfO2 | 300 | HfCl4 + H2O | 1.6 s + 5 s + 0.1 s + 1 s |
TEMAH + H2O | |||
Al2O3 | Al(CH3)3 + H2O | 0.1 s + 6 s + 0.1 s + 2 s | |
AlCl3 + H2O | |||
HfO2/Al2O3 | TEMAH + Al(CH3)3 + H2O/HfCl4 + Al(CH3)3 + H2O | Same as single-layer parameters | |
HfO2 | 250 | AlCl3 + H2O | 0.1 s + 6 s + 0.1 s + 2 s |
0.2 s + 10 s + 0.2 s + 6 s | |||
Al2O3 | HfCl4 + H2O | 1.6 s + 5 s + 0.1 s + 1 s | |
1.6 s + 10 s + 0.1 s + 2 s | |||
HfO2/Al2O3 | TEMAH + AlCl3 + H2O | Same as single-layer parameters |