Figure 1From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants TEM and schematic cross-section views of channel fin. (a) A TEM view of realistic shape of fabricated channel fin to show the fin angle variation. (b) The schematic cross-section view of channel fin with respect to different fin angles for devices with a fixed-top-fin width (W top), in this study.Back to article page