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Figure 2 | Nanoscale Research Letters

Figure 2

From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Figure 2

The large-scale statistical device simulation method of RDF on the device’s channel region. (a) The schematic structure of the 16-nm-gate trapezoidal bulk FinFET device and the cross-section view of fin channel. (b) Discrete dopants are randomly distributed in a large cube with the average concentration of 1.5 × 1018 cm−3. The number of RDs is dependent on the magnitude of the fin angle. (c) The right plot is the bar chart of distribution of number of dopants of each fin-angle bulk FinFET. The left plot is the procedure of generating fluctuated cases. The cube is partitioned into many subcubes. The coordinate transform is performed on those subcubes to make them become trapezoidal-shaped channels and map them into device channel regions.

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