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Figure 4 | Nanoscale Research Letters

Figure 4

From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Figure 4

Plots of I off versus I on and values of σI off , σI on , averaged I off , and averaged I on . (a) The Ioff versus RDs’ number plot. (b) The I on versus RDs’ number plot. (c) The on/off current characteristic plot. (d) The value of σI off, σI on, averaged I off, and averaged I on of trapezoidal FinFET device with different fin angles.

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