Figure 5From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants Plot of V th versus the number of RDs and the RDs’ number distribution. (a) The Vth versus the number of RDs. (b) to (f) RDs’ number distribution for every fin angle, where the μ is the mean and σ is the fluctuation.Back to article page