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Figure 6 | Nanoscale Research Letters

Figure 6

From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Figure 6

Off-state potential distribution of FinFET device and influence of one dopant on conduction band energy. (a) The off-state potential distribution of FinFET device with the right angle and 70° fin angle. (b) The influence of one dopant on upper-fin and lower-fin conduction band energy of FinFET device with the right angle and 70° fin angle. (c) The related value in (b), which can indicate the influence of dopant is dependent on the position and the fin angle and the ability of inducing inversion charge is not the same everywhere of gate.

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