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Table 1 The simulation settings of nominal bulk FinFET devices

From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Fin angle θ (°) 90 85 80 75 70
Top-fin width, W top (nm) 8 8 8 8 8
Bottom-fin width, W bottom (nm) 8 13.6 19.3 25.1 31.3
Total fin width, W total (nm) 72 72.24 72.99 74.26 76.1
Fin height, H f (nm) 32
Effective oxide thickness, EOT (nm) 1
Gate length, L g (nm) 16
Source/drain doping (cm3) 1.0E20
Punch-through stopper (cm3) 1.5E19
Channel doping (cm3) 1.5E18
Drain voltage, V DD (V) 0.8
  1. The V th are calibrated to 250 mV.