Figure 15
From: Physical and chemical mechanisms in oxide-based resistance random access memory
I-V curve and bipolar curves of Pt/Zn:SiO 2 /TiN, Pt/Ni:SiO 2 /TiN, and Pt/Sn:SiO 2 /TiN devices. (a) Current–voltage (I-V) curve of the Pt/SiO2/TiN sandwich device at room temperature without resistive switching characteristic. Bipolar resistance switching I-V curves of (b) the Pt/Zn:SiO2/TiN device with forming-free property, (c) the Pt/Ni:SiO2/TiN device, and (d) the Pt/Sn:SiO2/TiN device.