Figure 21
From: Physical and chemical mechanisms in oxide-based resistance random access memory
Switching layer structure, 100-cycle current-voltage sweep, and corresponding endurance property test. a to d are the switching layer structures of the four kinds of devices. e to h are the 100-cycle current-voltage sweep without equipment current compliance. Insets of the figures are the corresponding HRS and LRS distribution with a reading voltage of 0.1 V. i to l are the endurance performance of each device.