Figure 32
From: Physical and chemical mechanisms in oxide-based resistance random access memory
The I-V curves are the resistive switching characteristics of Sn:SiO x film [ 146 ].
Figure 32 | Nanoscale Research Letters
From: Physical and chemical mechanisms in oxide-based resistance random access memory
The I-V curves are the resistive switching characteristics of Sn:SiO x film [ 146 ].