Table 1 Comparison of silicon oxide-based RRAM devices with different metal dopants
From: Physical and chemical mechanisms in oxide-based resistance random access memory
Zn:SiO 2 | Ni:SiO 2 | Sn:SiO 2 | |
|---|---|---|---|
Mole fraction | Zn:Si:O | Ni:Si:O | Sn:Si:O |
4.9:24.9:70.2 | 2.4:27.9:70.4 | 0.3:29.5:70.2 | |
Endurance (times) | >107 | >106 | >105 |
Retentions at 85°C (sec) | >104 | >104 | >104 |