Table 2 Comparison of silicon oxide based RRAM devices with different fabricated methods
From: Physical and chemical mechanisms in oxide-based resistance random access memory
Metal-doped SiO 2 | Multilayer GO-doped SiO 2 | SCCO 2 treatment | |
---|---|---|---|
Operation current | Typical | Typical | Low |
Operation stability | Good | Good | Good |
Endurance (times) | >105 | >1012 | >105 |
Retention at 85°C (sec) | >104 | >104 | >104 |