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Table 2 Comparison of silicon oxide based RRAM devices with different fabricated methods

From: Physical and chemical mechanisms in oxide-based resistance random access memory

 

Metal-doped SiO 2

Multilayer GO-doped SiO 2

SCCO 2 treatment

Operation current

Typical

Typical

Low

Operation stability

Good

Good

Good

Endurance (times)

>105

>1012

>105

Retention at 85°C (sec)

>104

>104

>104

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