Figure 1From: The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist Dissolution kinetics of Ge 25 Se 75 layers in the amine-based etchant. Curve 1 - annealed and unexposed layer, curve 2 - annealed layer exposed before etching by integral radiation of the mercury lamp (250 W) for 45 min, and curve 3 - annealed layer exposed using the same lamp during etching.Back to article page