Table 1 Device performance summary
From: Influence of post-annealing on the off current of MoS2 field-effect transistors
Temperature | On/off current ratio | On current (A) | Off current (A) | Field-effect mobility (cm 2 /Vs) | Subthreshold swing [V/dec] |
|---|---|---|---|---|---|
Room temperature | 3.5 × 1001 | 6.38 × 10−04 | 1.80 × 10−05 | 8.75 | 36.20 |
200°C | 1.7 × 1007 | 4.06 × 10−04 | 2.34 × 10−11 | 21.19 | 0.91 |
300°C | 8.7 × 1006 | 3.87 × 10−04 | 4.43 × 10−11 | 20.21 | 1.43 |
400°C | 3.2 × 1000 | 8.39 × 10−05 | 2.66 × 10−05 | 4.34 | 77.51 |