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Figure 4 | Nanoscale Research Letters

Figure 4

From: Dynamics of mass transport during nanohole drilling by local droplet etching

Figure 4

AFM images demonstrating droplet conservation at completely minimized As background. (a) GaAs surface after Ga-LDE with θ = 2.0 ML and T=600°C. The As flux F As during annealing is of about 1 ×10−7 Torr according to our typical process conditions. (b) GaAs surface after Ga-LDE at minimized As background flux F As<1×10−8 Torr by a 1-h growth interruption with the As cell switched off before etching. (c) AlGaAs surface after Al-LDE with θ = 1.0 ML, T=640°C, and F As≃1×10−7 Torr. (d) AlGaAs surface after Al-LDE at F As<1×10−8 Torr.

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