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Figure 5 | Nanoscale Research Letters

Figure 5

From: Dynamics of mass transport during nanohole drilling by local droplet etching

Figure 5

Scheme of droplet-epitaxy-based regimes at different As fluxes F As and process temperatures T . (a) Droplet epitaxy with crystallization of GaAs QDs using a high F As. (b) Droplet etching of nanoholes at high T and small F As. Here, Ga atoms detaching from the droplet crystallize with background As and form a thin GaAs layer. (c) Droplet conservation at high T and minimized F As. Adatom detachment from and re-attachment to the droplets is balanced.

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