TY - JOUR AU - Jin, Chunyan AU - Liu, Ben AU - Lei, Zhongxiang AU - Sun, Jiaming PY - 2015 DA - 2015/02/28 TI - Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone JO - Nanoscale Research Letters SP - 95 VL - 10 IS - 1 AB - TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti3+ ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti3+ ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere. SN - 1556-276X UR - https://doi.org/10.1186/s11671-015-0790-x DO - 10.1186/s11671-015-0790-x ID - Jin2015 ER -