Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

Table 1 Hole concentration and Hall effect resistivity of the sample D and sample E

	Hole concentration (cm ⁻³ )	Hall effect resistivity (Ωcm)
Sample D	7.5 × 10¹⁷	0.65
Sample E	1.1 × 10¹⁷	5.60