Figure 2From: Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks Effective lifetime for n-type Si capped with Al 2 O 3 films before and after annealing. The thickness of Al2O3 films is about 20 nm and the annealing process is done at 450°C for 10 min in air. The substrate temperature (Sub-T) and the number of ALD cycles are also shown here.Back to article page