Figure 6From: Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks Effective lifetime for single-side a-Si:H capped Si before and after Al 2 O 3 deposited. The Al2O3 films were deposited on PE-SA-1 and PE-SA-2 using PE-ALD at 200°C. The Al2O3 films were deposited on T-SA-1 using T-ALD at 200°C. After Al2O3 film deposition, the samples were annealed at 450°C for 10 min in air.Back to article page