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Table 1 The structures of samples

From: Oxidation precursor dependence of atomic layer deposited Al₂O₃ films in a-Si:H(i)/Al₂O₃ surface passivation stacks

	Before deposition	After deposition
PE-SA-1	80 nm a-Si:H/Si	30 nm Al₂O₃ (210 cycles) + 80 nm a-Si:H/Si
PE-SA-2	80 nm a-Si:H/Si	10 nm Al₂O₃ (85 cycles) + 80 nm a-Si:H/Si
T-SA-1	170 nm a-Si:H/Si	30 nm Al₂O₃ (200 cycles) + 170 nm a-Si:H/Si

The numbers of ALD deposition cycles are shown behind the Al₂O₃ film thickness.

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