Skip to main content

Table 2 Resistivity, carrier concentration, and mobility of the films before and after annealing in different ambients

From: Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

Al (at.%) ρ (Ω • cm) n (cm −3 ) μ (cm 2 / Vs ) ρ (Ω • cm) n (cm −3 ) μ (cm 2 / Vs )
  As-grown Annealed in air
0 2.7 × 10−2 1.4 × 1019 16.40 2.6 × 102 - -
1 6.1 × 10−3 9.7 × 1019 10.56 3.2 × 101 - -
2 6.4 × 10−3 1.5 × 1020 6.33 2.0 × 101 - -
3 5.3 × 10−3 2.1 × 1020 5.63 2.1 × 101 - -
4 7.7 × 10−3 1.8 × 1020 4.38 4.0 × 101 - -
  Annealed in Ar Annealed in N2
0 6.0 × 101 - - 4.4 × 102 - -
1 3.1 × 10−1 2.2 × 1019 0.91 2.1 × 100 5.9 × 1018 0.50
2 1.1 × 10−1 5.7 × 1019 0.98 3.0 × 10−1 3.4 × 1019 0.60
3 6.8 × 10−2 7.8 × 1019 1.12 5.0 × 10−1 3.2 × 1019 0.39
4 1.1 × 10−1 5.6 × 1019 0.97 1.8 × 100 4.8 × 1018 0.70