Table 2 Resistivity, carrier concentration, and mobility of the films before and after annealing in different ambients
From: Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition
Al (at.%) | ρ (Ω • cm) | n (cm −3 ) | μ (cm 2 / Vs ) | ρ (Ω • cm) | n (cm −3 ) | μ (cm 2 / Vs ) |
|---|---|---|---|---|---|---|
As-grown | Annealed in air | |||||
0 | 2.7 × 10−2 | 1.4 × 1019 | 16.40 | 2.6 × 102 | - | - |
1 | 6.1 × 10−3 | 9.7 × 1019 | 10.56 | 3.2 × 101 | - | - |
2 | 6.4 × 10−3 | 1.5 × 1020 | 6.33 | 2.0 × 101 | - | - |
3 | 5.3 × 10−3 | 2.1 × 1020 | 5.63 | 2.1 × 101 | - | - |
4 | 7.7 × 10−3 | 1.8 × 1020 | 4.38 | 4.0 × 101 | - | - |
Annealed in Ar | Annealed in N2 | |||||
0 | 6.0 × 101 | - | - | 4.4 × 102 | - | - |
1 | 3.1 × 10−1 | 2.2 × 1019 | 0.91 | 2.1 × 100 | 5.9 × 1018 | 0.50 |
2 | 1.1 × 10−1 | 5.7 × 1019 | 0.98 | 3.0 × 10−1 | 3.4 × 1019 | 0.60 |
3 | 6.8 × 10−2 | 7.8 × 1019 | 1.12 | 5.0 × 10−1 | 3.2 × 1019 | 0.39 |
4 | 1.1 × 10−1 | 5.6 × 1019 | 0.97 | 1.8 × 100 | 4.8 × 1018 | 0.70 |