Figure 3From: Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system Minority carrier lifetime for various thicknesses. Al2O3 with 10 to 25 nm annealed at 450°C to 600°C in the N2 ambient. The effective lifetime was measured by quasi-steady-state photo-conductance (QSSPC) technique to quantify the surface passivation level.Back to article page