Figure 4From: The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111) I to V curves of the samples a (without AlN) and b (with AlN). A rectification behavior can be observed. The inset shows the sketch map of our measurement configuration and ohmic contacting I to V curves of the indium electrodes on the surface of Si substrate.Back to article page