Figure 1From: Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon SEM surface micrographs. SEM surface micrographs of (a) a 70-nm Sb2Te3 film grown on Si3N4, (b) a 60-nm Ge2Sb2Te5 film grown on Si3N4, (c) a 70-nm GeSb8Te film grown on Si3N4, (d) cross-section structure of the 60-nm Ge2Sb2Te5 film grown on Si3N4.Back to article page