Figure 2From: Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices Bright-field images and SAED patterns. (a) Bright-field images of the m-plane ZnO on m-plane sapphire. The inset of (a) shows the SAED pattern at the interface. (b) SAED pattern obtained from the ZnO thin film. (c) SAED pattern obtained from the m-plane sapphire substrate.Back to article page