Figure 5From: Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices EL spectra of the MIS devices and AFM image of the ZnO thin film. (a) EL spectra of the MIS devices. The inset of (a) is the schematic diagram of the MIS devices. (b) AFM image of the ZnO thin film.Back to article page