Figure 3From: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell The 2 × 2 μm AFM images of the fifth layer InAs QDs. (a) Sample A1 with Ga0.90In0.10As SRL, (b) sample A2 without Ga0.90In0.10As SRL.Back to article page