Figure 2From: A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors Optic images and transfer characteristics of n- FET and p- FET. Optical microscopic image of (a) the MoS2 n-FET and (b) the WSe2 p-FET that was employed to fabricate the TMD CMOS inverter. The transfer characteristics of (c) the MoS2 n-FET and (d) the WSe2 p-FET at a drain voltage of 0.2 V.Back to article page