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Table 1 Summary of the CMOS inverter peak gain based on various channels

From: A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

Channel material
    Inverter peak gain Ref.
  n-type p-type   
2D material MoTe2 (ambipolar) 1.4 [14]
  WSe2 WSe2 12 [12]
  WSe2 WSe2 25 [13]
  MoS2 Carbon nanotube 1.3 [9]
  MoS2 Phosphorene 1.4 [11]
  MoS2 BSCO 1.7 [10]
  MoS2 WSe2 13.7 This work
Silcon Si-nanowire Si-nanowire 45 [15]
Oxide GIZO SnO 1.7 [16]
Organic OC1C10-PPV:PCBM blend (ambipolar) 10 [17]