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Table 1 Summary of the CMOS inverter peak gain based on various channels

From: A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

Channel material

   

Inverter peak gain

Ref.

 

n-type

p-type

  

2D material

MoTe2 (ambipolar)

1.4

[14]

 

WSe2

WSe2

12

[12]

 

WSe2

WSe2

25

[13]

 

MoS2

Carbon nanotube

1.3

[9]

 

MoS2

Phosphorene

1.4

[11]

 

MoS2

BSCO

1.7

[10]

 

MoS2

WSe2

13.7

This work

Silcon

Si-nanowire

Si-nanowire

45

[15]

Oxide

GIZO

SnO

1.7

[16]

Organic

OC1C10-PPV:PCBM blend (ambipolar)

10

[17]

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