Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition

Table 2 Surface fixed charge and the defect density of state vary with different heat treatments

PEALD	Q _f (cm ⁻ 2)	D _it (eV ⁻¹ cm ⁻ 2)	Effective lifetime (μs)
100°C as-deposited	−3.46 × 10¹¹	7 × 10¹²	24.258
100°C annealing	−1.21 × 10¹²	6.1 × 10¹¹	659.98
200°C as-deposited	−3.95 × 10¹¹	1.64 × 10¹²	58.282
200°C annealing	−5.29 × 10¹¹	1.2 × 10¹¹	1,647.3