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Table 2 Surface fixed charge and the defect density of state vary with different heat treatments

From: Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition

PEALD Q f (cm 2) D it (eV −1cm 2) Effective lifetime (μs)
100°C as-deposited −3.46 × 1011 7 × 1012 24.258
100°C annealing −1.21 × 1012 6.1 × 1011 659.98
200°C as-deposited −3.95 × 1011 1.64 × 1012 58.282
200°C annealing −5.29 × 1011 1.2 × 1011 1,647.3
  1. Annealing temperature is 450°C and measured by C-V method.