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Table 1 The thin film deposition parameters for the ALD process

From: A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers

Film TMA pulse time (s) N 2 purge time (s) H 2 O/EG pulse time (s) N 2 purge time (s) Temperature (°C) Pressure (Pa) Carrier gas
Al2O3 0.02 30 0.02 30 80 1.5 × 100 N2
Alucone 0.02 30 0.07 (preheated to 95°C) 120 80 1.5 × 100 N2