Table 1 The thin film deposition parameters for the ALD process
| Film | TMA pulse time (s) | N 2 purge time (s) | H 2 O/EG pulse time (s) | N 2 purge time (s) | Temperature (°C) | Pressure (Pa) | Carrier gas |
|---|---|---|---|---|---|---|---|
| Al2O3 | 0.02 | 30 | 0.02 | 30 | 80 | 1.5 × 100 | N2 |
| Alucone | 0.02 | 30 | 0.07 (preheated to 95°C) | 120 | 80 | 1.5 × 100 | N2 |