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Table 1 Thickness (measured by SE) of the as-grown and annealed samples discussed in this work

From: Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Sample

Number of ALD Al 2 O 3 cycles

Thickness as-grown (nm)

Thickness after RTA (nm)

S1

0

8.2

8.6

S2

5

8.4

8.7

S3

10

8.8

9.0

S4

15

9.3

9.5

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