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Table 1 Thickness (measured by SE) of the as-grown and annealed samples discussed in this work

From: Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Sample Number of ALD Al 2 O 3 cycles Thickness as-grown (nm) Thickness after RTA (nm)
S1 0 8.2 8.6
S2 5 8.4 8.7
S3 10 8.8 9.0
S4 15 9.3 9.5