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Figure 1 | Nanoscale Research Letters

Figure 1

From: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Figure 1

RRAM device structures and device unit of Al 2 O 3 /HfO 2 /Al 2 O 3 trilayer structure. (a) Schematic and test configuration of the RRAM device structures of Al2O3/HfO2/Al2O3 trilayer structure on TiN-coated Si with Pt top electrode. (b) Typical cross-sectional TEM image of the device unit of Al2O3/HfO2/Al2O3 trilayer structure on TiN-coated Si by ALD.

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