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Figure 3 | Nanoscale Research Letters

Figure 3

From: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Figure 3

Resistive switching characteristics of the device unit and distribution of the set and reset voltages. (a) Typical resistive switching characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si after initial, second, and third cycles. (b, c) Statistical results of distribution and cumulative probability of the set and reset voltages measured from a device unit for 400 times tests. (d) Resistive switching data of 50 randomly selected device units.

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