Figure 4From: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications The durability of the device unit of Pt/Al 2 O 3 /HfO 2 /Al 2 O 3 /TiN/Si. (a) The continuous program and erase test. (b) Read disturbance test for device after 104-s retention time at room temperature and 85°C.Back to article page